基于单层二硫化钨光控太赫兹调制器的研究

在太赫兹技术的应用中,控制太赫兹波的传输非常重要,太赫兹调制器被认为是下一代太赫兹无线通信中的重要器件.成功地研究了一种硅上生长单层二硫化钨的新型光泵浦太赫兹调制器,由于在硅衬底和二硫化钨的交界处出会形成异质结,二硫化钨充当着催化剂的作用,在光泵浦的作用下,在异质结处催化出更多的载流子,因此实现了更大的调制深度.结果表明,在泵浦光波长为660 nm、功率仅为117 mW时,该调制器的调制深度达到了63.6%.这种新型二维过渡金属硫化物对太赫兹波的调制有着更高的效率,使其在太赫兹技术中有很好的应用前景.

Research on optical controlled terahertz modulator based on monolayer tungsten disulfide

Controlling the propagation of terahertz (THz) wave is very important in the application of THz technology. THz modulator is considered to be the key device in next-generation THz wireless communication. A new-type optically pumped THz modulator based on Si-grown monolayer tungsten disulfide (WS₂) was demonstrated. WS₂ acts as a catalyst due to the formation of heterojunction at the junction between Si substrate and WS₂, since more carriers are catalyzed at the heterojunction under pumping power, the modulator can achieve more deep modulation depth. The result shows that the modulation depth of this Si-grown monolayer WS₂ modulator can reach 63.6% under the low pumping power of 117 mW and the wavelength of the pump light is 660 nm. This novel two-dimensional transition metal dichalcogenides with high modulation efficiency have a great prospect in the application of THz technology.