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Direct oxidation of H2S into S. New catalysts and processes based on SiC support |
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| Authors: | Nicolas Keller Cuong Pham-Huu Claude Crouzet Marc J. Ledoux Sabine Savin-Poncet Jean-B. Nougayrede Jacques Bousquet |
| Affiliation: | a Lab. de Chimie des Matériaux Catalytiques, ECPM-Univ L. Pasteur and CNRS, 25, rue Becquerel, 67087 Strasbourg, France b Elf Aquitaine, Lacq and Solaize, France |
| Abstract: | Nickel sulphide, supported on SiC, exhibits a very high activity and selectivity for the direct oxidation of H2S into S at medium temperatures (100–120°C) or at room temperature (20–40°C). Iron oxide, also supported on SiC, is highly reactive, and selective, for the same reaction at higher temperatures (210–240°C). This support is very stable, insensitive to steam and to any sulphur compounds in this range of temperature. |
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