| 多晶硅薄膜阳极微腔有机发光器件及其简化制备流程的研究 |
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| 引用本文： | 李阳,孟志国,吴春亚,王文,郭海成,张芳,熊绍珍. 多晶硅薄膜阳极微腔有机发光器件及其简化制备流程的研究[J]. 半导体学报, 2008, 29(1): 144-148 |
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| 作者姓名： | 李阳 孟志国 吴春亚 王文 郭海成 张芳 熊绍珍 |
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| 作者单位： | 南开大学光电子所，天津市光电子薄膜器件与技术重点实验室，天津 300071;南开大学光电子所，天津市光电子薄膜器件与技术重点实验室，天津 300071;南开大学光电子所，天津市光电子薄膜器件与技术重点实验室，天津 300071;香港科技大学电机与电子工程系，香港;香港科技大学电机与电子工程系，香港;科技部高技术研究发展中心，北京 100044;南开大学光电子所，天津市光电子薄膜器件与技术重点实验室，天津 300071 |
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| 基金项目： | 国家高技术研究发展计划(863计划) , 国家自然科学基金 |
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| 摘 要： | 介绍了溶液法金属诱导晶化的p型掺杂多晶硅薄膜(p -poly-Si)的制备,并研究了它的电学特性和光学特性.由于p -MIC poly-Si薄膜具有比较好的电学特性,且在红光区域具有比较高的反射率与透射率和很小的吸收率,因此我们将它用作红光OLED的阳极.结果显示该器件的最大发光效率为5.88cd/A,比用ITO作阳极制备的OLED效率提高了57%.这是由于此薄膜对可见光比较高的反射率和阴极铝对可见光的很高反射性能,使之形成了一定Q值的微腔效应所至.这样,可以实现发光强度较高、单色饱和性较好的单色显示器件.本研究的意义还在于,由于此MOLED的p型掺杂MIC多晶硅阳极是与其共面型驱动TFT有源层、源/漏两极同层材料制备,即是TFT漏极的延伸;这样,不仅形成了高性能的AMOLED单色显示,而且也大大简化了AMOLED工艺流程,从而形成了简化流程的4-mask AMOLED基板制备工艺.
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| 关 键 词： | 金属诱导多晶硅 有机电致发光器件 微腔 简化流程 |
| 文章编号： | 0253-4177（2008）01-0144-05 |
| 收稿时间： | 2007-06-24 |
| 修稿时间： | 2007-08-25 |
A Poly-Crystalline Si Anode Microcavity Organic Light Emitting Device and Its Simplified Preparation Process Flow |
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| Li Yang,Meng Zhiguo,Wu Chuny,Man Wong,Hoi Sing Kwok,Zhang Fang and Xiong Shaozhen. A Poly-Crystalline Si Anode Microcavity Organic Light Emitting Device and Its Simplified Preparation Process Flow[J]. Chinese Journal of Semiconductors, 2008, 29(1): 144-148 |
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| Authors: | Li Yang Meng Zhiguo Wu Chuny Man Wong Hoi Sing Kwok Zhang Fang Xiong Shaozhen |
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| Affiliation: | Institute of Photo-Electronics,Nankai University,Tianjin Key Laboratory of Photo-Electronic Thin Film Devices and Technology,Tianjin 300071,China;Institute of Photo-Electronics,Nankai University,Tianjin Key Laboratory of Photo-Electronic Thin Film Devices and Technology,Tianjin 300071,China;Institute of Photo-Electronics,Nankai University,Tianjin Key Laboratory of Photo-Electronic Thin Film Devices and Technology,Tianjin 300071,China;Department of Electronic and Computer Engineering,The Hong Kong University of Science and Technology,Hong Kong,China;Department of Electronic and Computer Engineering,The Hong Kong University of Science and Technology,Hong Kong,China;The Center of R & D for High Technology,MOS,Beijing 100044,China;Institute of Photo-Electronics,Nankai University,Tianjin Key Laboratory of Photo-Electronic Thin Film Devices and Technology,Tianjin 300071,China |
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| Abstract: | The preparation of Boron-doped solution-based metal induced crystallized poly-Si is introduced and its electrical and optical characteristics are studied.P+-MIC poly-Si thin film has good electrical characteristics and optical characteristics including high reflection and transmission and very low absorption within red light region.As a result,we used it as an OLED electrode.The maximum luminance efficiency of the device with the poly-Si anode is 5.88cd/A,57% higher than that of the OLED with the ITO anode.Systemization of the relatively high reflectivity P+-poly-Si anode with the very high reflectivity Al cathode forms a micro-cavity structure with a certain Q to improve the efficiency of OLED fabricated on it.So,a homochromy display device with high EL intensity and high saturation performance can be realized.The significance of this study and design rests with:Using P+-poly-Si,which is the same material as the active layer and source and drain electrodes of the coplanar drive TFT,as the anode of MOLED in place of ITO,which not only develops high performance MOLED,but also greatly simplifies the preparation process flow.Consequently,a simple 4-mask AMOLED panel preparation process is formed. |
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| Keywords: | metal induced crystallization poly-crystalline Si film organic light emitting display microcavity simple flow |
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