NZO透明导电薄膜的制备及其性能研究

室温下,采用直流磁控溅射法,在玻璃衬底上制备出Nb掺杂ZnO(NZO,ZnO:Nb)透明导电薄膜。研究了靶与衬底之间的距离对NZO薄膜结构、形貌、光学及电学性能的影响。实验结果表明,不同靶基距下制备的NZO薄膜均为c轴择优取向生长,(002)衍射峰的强度随着靶基距的减小而增大。靶基距增大时,薄膜表面逐步趋向平整光滑、均匀致密,薄膜的厚度逐渐减小。在靶基距为60mm时,制备的薄膜厚为355.4nm,电阻率具有最小值(6.04×10-4Ω.cm),在可见光区的平均透过率达到92.5%,其光学带隙为3.39eV。

Preparation and properties of NZO transparent conducting thin films

Transparent conducting Nb-doped ZnO(NZO) thin films were prepared by DC magnetron sputtering on glass substrate at room temperature.The effects of target-to-substrate distance on structural,morphological,optical and electrical properties of ZnO:Nb films are investigated.Experimental results show that Nb-doped ZnO thin films exhibit preferred c-axis-orientation with different target-to-substrate distances.When the target-to-substrate distance decreases,the intensity of(002) diffraction peak is enhanced.The surface of the films tends to be smooth,uniform and compact while the film thickness gradually decreases as the target-to-substrate distance increases.The lowest resistivity achieved is 6.04×10-4 Ω·cm when the target-to-substrate distance is 60 mm and the prepared film thickness is 355.4 nm.The film presents a high transmittance of 92.5% in the visible range and the optical band gap is 3.39 eV.