P+ implantation and annealing effects on theT
c in BiSrCaCuO films |
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| Authors: | W T Lin H P Kao Y F Chen Y K Fang |
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| Affiliation: | (1) Department of Materials Engineering, National Cheng Kung University, 1 Ta-Hsueh Road, Tainan, Taiwan;(2) Institute of Electrical and Computer Engineering, National Cheng Kung University, 1 Ta-Hsueh Road, Tainan, Taiwan |
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| Abstract: | TheT
c changes related to the microstructure as a function of annealing temperature for the BiSrCaCuO (BSCCO) film implanted with 170 keV P+ at two different doses were studied. The BSCCO films were prepared by d.c. sputtering on MgO substrates. For the film implanted at a dose of 5×1015 cm–2 post-implantation annealing at 600–800°C enabled theT
cs of the film to be completely recovered. For the film implanted at a dose of 1.0×1017cm–2 theT
cs were only partly recovered after 600°C annealing. On further annealing at 700°C the superconductivity of the film disappeared. TEM examination showed that significant amount of CaP, Ca3P2, and some unknown phases were formed. It is considered that the significant amounts of these phases formed during post-implantation annealing renders the recovery of the superconductivity of the P+-implanted BSCCO film difficult. |
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| Keywords: | |
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