Room-temperature InAs=AlSb quantum-cascade laser operating at 8.9 /spl mu/m |
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| Authors: | Ohtani K Fujita K Ohno H |
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| Affiliation: | Lab. for Nanoelectronics & Semicond. Spintronics, Tohoku Univ., Aoba; |
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| Abstract: | A room-temperature InAs/AlSb quantum-cascade laser operating at 8.9 mum is reported. The laser structure is grown on an n-InAs (100) substrate by solid-source molecular-beam epitaxy. The active region utilises a diagonal intersubband transition in an InAs/AlSb three-quantum-well structure. Observed threshold current density in pulse mode is 2.6 kA/cm2 at 80 K and 12.0 kA/cm2 at 300 K. The maximum operation temperature is 305 K |
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