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Silicon implanted super low-noise GaAs MESFET |
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| Authors: | Feng M. Eu V.K. Siracusa M. Watkins E. Kimura H. Winston H. |
| Affiliation: | Hughes Aircraft Company, Torrance Research Center, Torrance, USA; |
| Abstract: | Super low-nose GaAs MESFETs have been fabricated using direct ion implantation into undoped LEC substrates. Microwave results at 12 GHz include a noise figure of 1.3 dB, with an associated gain of 10.3 dB and a maximum available gain of 14.9 dB. |
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