A 1.8-V 128-Mb mobile DRAM with double boosting pump, hybrid current sense amplifier, and dual-referenced adjustment scheme for temperature sensor |
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Authors: | Jae-Yoon Sim Hongil Yoon Ki-Chul Chun Hyun-Seok Lee Sang-Pyo Hong Kyu-Chan Lee Jei-Hwan Yoo Dong-Il Seo Soo-In Cho |
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Affiliation: | Memory Div., Samsung Electron. Co. Ltd., Kyunggi-Do, South Korea; |
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Abstract: | To verify three important circuit schemes suitable for DRAMs in mobile applications, a 1.8-V 128-Mb SDRAM was implemented with a 0.15-/spl mu/m technology. To achieve an ideal 33% efficiency, the double boosting pump uses two capacitor's series connection at pumping phase, while they are precharged in parallel. The hybrid folded current sense amplifier together with a novel replica inverter connection improved power and speed performances. Also, a dual-referenced adjustment scheme for a temperature sensor was proposed to allow a very high accuracy in tuning. Without loss in productivity, the implemented dual-referenced searching technique achieved tuning error of less than /spl plusmn/2.5/spl deg/C. |
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