| 铜布线工艺中阻挡层钽膜的研究 |
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| 引用本文： | 庞恩文,林晶,汪荣昌,戎瑞芬,宗祥福. 铜布线工艺中阻挡层钽膜的研究[J]. 固体电子学研究与进展, 2002, 22(1): 78-81 |
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| 作者姓名： | 庞恩文 林晶 汪荣昌 戎瑞芬 宗祥福 |
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| 作者单位： | 复旦大学材料科学系,上海,200433 |
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| 基金项目： | 国家自然科学基金重点项目资金资助 (项目编号 :6983 60 3 0 ) |
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| 摘 要： | 从钽膜质量的角度研究了用溅射方法在硅衬底上得到的 60 nm钽膜对铜硅互扩散的阻挡效果 ,钽膜的质量通过对硅衬底的表面处理以及钽膜的淀积速率来控制。研究发现 ,适当的硅衬底表面处理对钽膜是否能产生良好的防扩散能力起着关键的作用。本研究还得到了能有效阻挡铜硅接触的钽膜的淀积速率。
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| 关 键 词： | 铜布线 扩散阻挡层 钽 |
| 文章编号： | 1000-3819(2002)01-078-04 |
| 修稿时间： | 2001-02-21 |
Properties of Ta Film as Diffusion Barrier in the Copper Metallization |
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| PANG Enwen LIN Jing WANG Rongchang RONG Ruifen ZONG Xiangfu. Properties of Ta Film as Diffusion Barrier in the Copper Metallization[J]. Research & Progress of Solid State Electronics, 2002, 22(1): 78-81 |
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| Authors: | PANG Enwen LIN Jing WANG Rongchang RONG Ruifen ZONG Xiangfu |
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| Abstract: | This work studied the barrier properties of the 60 nm Tantalum (Ta) film sputtered on the Si substrate to against the interdiffusion of Si and copper (Cu). The quality of the Ta film was controlled by the cleaning process of Si substrate and the deposit rate of Ta film. It was found that to clean the Si substrate properly was essential to a good diffusion barrier. The deposit rate of the Ta film for efficiently obstructing the contact of Si and Cu was also got. |
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| Keywords: | copper metallization diffusion barrier Tantalum |
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