New model for submicron-scale dual-gate TFT |
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| Authors: | Baudrand H. Ahmed A.A. |
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| Affiliation: | ENSEEIHT, Laboratoire de Microondes, Toulouse, France; |
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| Abstract: | A new model is proposed to represent the submicron-scale dual-gate thin-film transistor (DGTFT) as the association of three single-gate TFTs. The finite-difference method is applied to verify the conditions for which the model is valid, and using a new variant of this technique the quasistatic solution is obtained in an inhomogeneous medium. |
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