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Room-temperature ferromagnetic ordering in Mn-doped ZnO thin films grown by pulsed laser deposition
Authors:W. Y. Shim  K. A. Jeon  K. I. Lee  S. Y. Lee  M. H. Jung  W. Y. Lee
Affiliation:(1) Department of Materials Science and Engineering, Yonsei University, 120-749 Seoul, Korea;(2) Department of Electrical and Electronic Engineering, Yonsei University, 120-749 Seoul, Korea;(3) Quantum Materials Research Team, Korea Basic Science Institute, 305-333 Deajeon, Korea
Abstract:The ferromagnetic ordering in Mn-doped ZnO thin films grown by pulsed laser deposition (PLD) as a function of oxygen pressure and substrate temperature has been investigated. Room-temperature ferromagnetic behaviors in the Mn-doped ZnO films grown at 700°C and 800°C under 10−1 torr in oxygen pressure were found, whereas ferromagnetic ordering in the films grown under 10−3 torr disappeared at 300 K. The large positive magnetoresistance (MR), ∼10%, was observed at 5 K at low fields and small negative MR was observed at high fields, irrespective of oxygen pressure. In particular, anomalous Hall effect (AHE) in the Mn-doped ZnO film grown at 700°C under 10−1 Torr has been observed up to 210 K. In this work, the observed AHE is believed to be further direct evidence demonstrating that the Mn-doped ZnO thin films are ferromagnetic.
Keywords:Diluted magnetic semiconductors (DMSs)  Mn-doped ZnO  anomalous Hall effect (AHE)  pulsed laser deposition (PLD)  oxygen pressure  ferromagnetism
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