| 沉积条件对硅基薄膜非晶转微晶相变、沉积速率及其光电性能的影响(英文) |
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| 引用本文： | 朱秀红,陈光华,郑茂盛. 沉积条件对硅基薄膜非晶转微晶相变、沉积速率及其光电性能的影响(英文)[J]. 功能材料与器件学报, 2012, 18(2): 103-108 |
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| 作者姓名： | 朱秀红 陈光华 郑茂盛 |
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| 作者单位： | 1. 西北大学物理系,西安,710069
2. 北京工业大学材料科学与工程学院,北京,100022 |
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| 基金项目： | 国家自然科学基金资助项目 |
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| 摘 要： | 本文采用HWA-MWECR-CVD系统制备了微晶硅薄膜。研究了氢稀释比、反应压强以及微波功率对微晶硅薄膜非晶转微晶相变及其相关性能的影响。实验结果表明:当氢稀释比为94%、反应压强为1.5Pa以及微波功率为500W时,高质量的微晶硅薄膜可以被获得,如2.86*104的高光敏性,1nm左右的沉积速率以及8.9%的光致衰退速率等。
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| 关 键 词： | HWA-MWECR-CVD系统 微晶硅薄膜 相变 沉积速率 光电性能 |
Influence of deposition conditions on the amorphous to microcrystalline phase transition, deposition rate and photo - electronic properties of silicon thin films |
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| ZHU Xiu-hong , CHEN Guang-hua , ZHENG Mao-sheng. Influence of deposition conditions on the amorphous to microcrystalline phase transition, deposition rate and photo - electronic properties of silicon thin films[J]. Journal of Functional Materials and Devices, 2012, 18(2): 103-108 |
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| Authors: | ZHU Xiu-hong CHEN Guang-hua ZHENG Mao-sheng |
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| Affiliation: | 1 (1.Department of Physics,Northwest University,Xi’an 710069,China;2.Department of Materials Science and Engineering,Beijing University of Technology,Beijing 100022,China) |
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| Abstract: | Using HWA-MWECR-CVD system μc-Si:H thin films were prepared.The influences of hydrogen dilution ratio,reaction pressure and microwave power on the amorphous to microcrystalline phase transition,deposition rate and photo-electronic properties of thin films were studied.The experimental results showed that under the conditions of 94% hydrogen dilution ratio,1.5Pa reaction pressure and 500W microwave power,high-quality μc-Si:H thin films were obtained,such as high photosensitivity of 2.86*104,high deposition rate of about 1 nm/s and low light-induced degradation rate of 8.9%,etc. |
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| Keywords: | HWA-MWECR-CVD μc-Si: H thin films phase transition deposition rate photo-e-lectronic properties |
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