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溶胶凝胶法制备ZnO:Ga作为电流扩散层的LED光电性能研究
引用本文:李倩,王万晶,李喜峰,张建华,吕建国. 溶胶凝胶法制备ZnO:Ga作为电流扩散层的LED光电性能研究[J]. 功能材料与器件学报, 2012, 18(3): 238-242
作者姓名:李倩  王万晶  李喜峰  张建华  吕建国
作者单位:1. 上海大学新型显示技术及应用集成教育部重点实验室上海200072;上海大学材料科学与工程学院上海200072
2. 上海大学新型显示技术及应用集成教育部重点实验室上海200072
3. 上海大学新型显示技术及应用集成教育部重点实验室上海200072;浙江大学硅材料国家重点实验室杭州310027
4. 浙江大学硅材料国家重点实验室杭州310027
基金项目:国家自然科学基金委的项目资助,上海市科委高新技术重大专项基金,浙江大学硅材料国家重点实验室开放基金
摘    要:采用溶胶凝胶法制备了ZnO:Ga(GZO)透明导电薄膜,并用做GaN基LED的电流扩散层。研究表明,GZO薄膜为多晶薄膜,透光率大于80%,粗糙度为Ra 4.6nm,制备的LED的开启电压为2.4V,并成功的点亮LED芯片。

关 键 词:溶胶凝胶  LED  GZO

Optical and Electrical Properties of the LED Using ZnO:Ga Film as Current Diffusion Layer by Sol-gel Technique
LI Qian , WANG Wang-jing , LI Xi-Feng , ZHANG Jian-hua , LV Jian-guo. Optical and Electrical Properties of the LED Using ZnO:Ga Film as Current Diffusion Layer by Sol-gel Technique[J]. Journal of Functional Materials and Devices, 2012, 18(3): 238-242
Authors:LI Qian    WANG Wang-jing    LI Xi-Feng    ZHANG Jian-hua    LV Jian-guo
Affiliation:1.Key Laboratory of Advanced Display and System Applications of Ministry of Education, Shanghai University,Shanghai,200072 China; 2.School of Materials Science and Engineering,Shanghai University,Shanghai,200072 China; 3.State Key Laboratory of Silicon Materials,Department of Materials Science and Engineering, Zhejiang University,Hangzhou 310027,China)
Abstract:The transparent conduct oxide film-ZnO:Ga thin film was fabricated by sol-gel technique and was used as current diffusion layer in the GaN-based LED.It was found that the GZO thin film has a poly-crystalline structure.The transmittance property of the GZO film coated on the glass is over 80% and the roughness is Ra 4.6nm.A turn-on voltage of 2.4V and blue light were successfully observed in the LED using the GZO as current diffusion layer by sol-gel technique.It is believed that sol-gel technique is a promising method to fabricate the current diffusion layer instead of traditional methods.
Keywords:Sol-gel technique  LED  GZO
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