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硅表面钝化及对异质结太阳电池特性的影响
引用本文:柳琴,刘成,叶晓军,郭群超,李红波,陈鸣波.硅表面钝化及对异质结太阳电池特性的影响[J].功能材料与器件学报,2012,18(1):40-45.
作者姓名:柳琴  刘成  叶晓军  郭群超  李红波  陈鸣波
作者单位:1. 上海空间电源研究所,上海200245;上海太阳能工程技术研究中心有限公司,上海200241
2. 上海空间电源研究所,上海,200245
3. 上海太阳能工程技术研究中心有限公司,上海,200241
基金项目:国家科技支撑计划(2010BAK69B25);国防基础科研计划(B0320110005);上海市科委科技攻关计划(10111100901)
摘    要:研究了不同的晶体硅表面钝化方法,测试分析了硅片的少数载流子寿命以及对晶体硅/非晶硅异质结(HIT)太阳电池性能的影响。发现适当时间的HF溶液处理、氢等离子体处理和表面覆盖约3nm的本征非晶硅层能有效提高硅片的少子寿命,从而提高HIT太阳电池的开路电压。对电池制备工艺综合优化后,得到了基于n型晶体硅的光电转换效率为16.75%(Voc=0.596V,Jsc=41.605mA/cm2,FF=0.676,AM1.5,25℃)的HIT太阳电池。

关 键 词:晶体硅/非晶硅异质结(HIT)  太阳电池  表面钝化  少子寿命

Silicon surface passivation and its effect on the performance of heterojunction solar cell
LIU Qin , LIU Cheng , YE Xiao-Jun , Guo Qun-chao , LI Hong-bo , CHEN Ming-bo.Silicon surface passivation and its effect on the performance of heterojunction solar cell[J].Journal of Functional Materials and Devices,2012,18(1):40-45.
Authors:LIU Qin  LIU Cheng  YE Xiao-Jun  Guo Qun-chao  LI Hong-bo  CHEN Ming-bo
Affiliation:1,2(1.Shanghai Institute of Space Power Sources,Shanghai 200245,China; 2.Shanghai Solar Energy Research Center limited company,Shanghai 200241,China)
Abstract:The surface passivation of silicon substrate has been studied,and the minority carrier lifetime of silicon substrate wafer along with its influence on the crystalline silicon / amorphous silicon heterojunction(HIT) solar cell has been tested and analyzed.It is found that appropriate HF solution treatment,H-plasma treatment,as well as inserting approximately 3nm intrinsic amorphous silicon layer can significantly improve the minority carrier lifetime of silicon substrate,which can improve the open circuit voltage of HIT solar cell sequentially.By comprehensively optimizing the process of HIT solar cell,the conversion efficiency of 16.75%(Voc=596mV,Jsc=41.605mA/cm2,FF=0.676,AM1.5,25℃) on n-type silicon substrate is obtained.
Keywords:crystalline silicon/amorphous silicon heterojunction(HIT)  solar cell  surface passivation  minority carrier lifetime
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