首页 | 本学科首页   官方微博 | 高级检索  
     


Improvement of hot-electron-induced degradation in MOS capacitorsby repeated irradiation-then-anneal treatments
Authors:Hwu   J.-G. Chen   J.-T.
Affiliation:Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei ;
Abstract:Improvement of the SiO2/Si interface degradation due to hot-electron injections from silicon by repeated irradiation-then-anneal treatments is described. Each treatment includes an irradiation of Co-60 with a total dose of 106 rd (SiO2) and an anneal in N2 for 10 min successively. It is found that the sensitivity to hot-electron induced damage decreases gradually as the number of irradiation-then-anneal treatments increases. After three such treatments, the MOS capacitor shows excellent behavior in terms of its hardness to hot-electron-induced degradation
Keywords:
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号