| 一种PN结隔离互补双极工艺 |
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| 引用本文： | 欧宏旗,刘伦才,胡明雨,税国华. 一种PN结隔离互补双极工艺[J]. 微电子学, 2007, 37(4): 548-552 |
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| 作者姓名： | 欧宏旗 刘伦才 胡明雨 税国华 |
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| 作者单位： | 1. 模拟集成电路国家重点实验室
2. 中国电子科技集团公司,第二十四研究所,重庆,400060 |
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| 摘 要： | 介绍了几种互补双极工艺的结构和特点，详细阐述了一种基于N型外延的PN结隔离互补双极工艺；着重探讨了隔离制作技术和PNP管设计要点，并对实际流片结果进行了讨论。
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| 关 键 词： | 互补双极工艺 隔离技术 PNP晶体管 高速放大器 |
| 文章编号： | 1004-3365（2007）04-0548-05 |
| 修稿时间： | 2007-03-04 |
Complementary Bipolar Process Based on P-N Junction Isolation |
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| OU Hong-qi,LIU Lun-cai,HU Ming-yu,SHUI Guo-hua. Complementary Bipolar Process Based on P-N Junction Isolation[J]. Microelectronics, 2007, 37(4): 548-552 |
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| Authors: | OU Hong-qi LIU Lun-cai HU Ming-yu SHUI Guo-hua |
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| Affiliation: | 1. National Key Laboratory of Analog Integrated Circuits ;2. Sichuan Institute of Solid State Circuits, CETC, Chongqing 400060, P. R. China |
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| Abstract: | A number of complementary bipolar process technologies are introduced, together with their features and advantages. A p-n junction isolated complementary bipolar technology based on N-type epitaxial wafers is described in detail. Essentials of the isolation control and PNP transistor design are investigated in particular. And finally, discussions are made on results from processed wafers. |
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| Keywords: | Complementary bipolar process Isolations PNP transistor High speed amplifier |
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