Ladungsträger‐Tiefenprofilierung an ultra‐flachen pn‐Übergängen

Charge carrier depth profiling on ultrashallow pn‐junctions The Stepwise Oxidation Profiling (SWOP) technique has been applied to charge carrier depth profiling on boron ion implanted silicon. The procedure works by altering between electrical sheet resistance measurements on van‐der‐Pauw (VDP)‐ structures and Si layer removal by electrochemical anodic oxidation. It was shown that the SWOP profiles are matching well with SIMS reference measurements, and that a depth resolution of ≤ nm and a detection limit of 1·10¹⁶cm^?3 was achieved.