Effects of B2O3-SiO2 doping on electrical properties of Ba0. 65 Sr0. 35 TiO3 ceramics

Ba0. 65 Sr0. 35 TiOa ceramics doped with B2O3-SiO2 glass composition were prepared by using conventional solid-state reaction method. The effects of glass dopant on the dielectric and ferroelectric properties were investigated. The results show that the dielectric constant decreases while the dielectric loss increases after doping. And as the glass content increases the dielectric constant decreases while the dielectric loss changes slightly. From the complex impedance analysis the resistance and the relaxation time of the grain and the grain boundary can be calculated.Comparing the P--E hysteresis loop of undoped Ba0.65 Sr0.35 TiO3 ceramics with that of B2O3-SiO2 doped Ba0.65 Sr0.35 TiO3 ceramics, it can be seen that the remanent polarization decreases when the B2O3-SiO2 content is lower than 8% (molar fraction), and the coercive field increases with the increase of B2O3-SiO2 content.

Effects of B2 O3-SiO2 doping on electrical properties of Ba0.65 Sr0.35 TiO3 ceramics

Ba0.65 Sr0.35 TiO3 ceramics doped with B2 O3-SiO2 glass composition were prepared by using conventional solid-state reaction method. The effects of glass dopant on the dielectric and ferroelectric properties were investigated. The results show that the dielectric constant decreases while the dielectric loss increases after doping. And as the glass content increases the dielectric constant decreases while the dielectric loss changes slightly. From the complex impedance analysis the resistance and the relaxation time of the grain and the grain boundary can be calculated.Comparing the P-E hysteresis loop of undoped Ba0.65 Sr0.35 TiO3 ceramics with that of B2 O3-SiO2 doped Ba0.65Sr0.35 TiO3 ceramics, it can be seen that the remanent polarization decreases when the B2 O3-SiO2 content is lower than 8 % (molar fraction), and the coercive field increases with the increase of B2O3-SiO2 content.