| MOCVD反应器内部气体流动模拟分析 |
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| 引用本文： | 陈燕,陈丹晔.MOCVD反应器内部气体流动模拟分析[J].液压气动与密封,2006(3):44-45. |
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| 作者姓名： | 陈燕 陈丹晔 |
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| 作者单位： | 上海工程技术大学高职学院,上海市高级技工学校,上海,200437 |
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| 摘 要： | 以金属有机化学气相沉积（MOCVD）反应器沉积GaN为对象,建立了反应器内部数学模型.通过应用GAMBIT软件划分复杂模型的基础上,对新颖的反应器的输运过程进行了二维数值模拟的研究,计算了反应器中流场的分布.根据对模拟结果的分析可知,在低于常压和反应器进口距加热器距离较小的工况下,反应器内的输运过程比较稳定,满足制备薄膜所需的层流特征.
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| 关 键 词： | 数学模型 流场 数值模拟 |
| 文章编号： | 1008-0813(2006)03-0044-02 |
| 修稿时间： | 2006年3月15日 |
Numerical analysis of flow process of gas in the MOCVD reactor |
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| CHEN Yan,CHEN Dan-ye.Numerical analysis of flow process of gas in the MOCVD reactor[J].Hydraulics Pneumatics & Seals,2006(3):44-45. |
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| Authors: | CHEN Yan CHEN Dan-ye |
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| Abstract: | The mathematics model of Metal organic chemical vapor deposition (MOCVD) reactor with system of GaN deposition in a reactor was established. On the base of the reactor model which was solved numerically by GAMBIT software with two-dimensional numerical study of transport process in the MOCVD reactor, the distributions of transport phenomena has been predicted then. The numerical results analyze that the optimum of transport process for film growth are low-pressure and short-distance between inlet and substrate. |
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| Keywords: | MOCVD |
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