Phonon sattering by nutral donors in n-type silicon

The scattering of phonons by neutral n-type impurities in silicon is studied. Following Keyes, who determined the phonon relaxation time for scattering by neutral impurities in n-type germanium, the relaxation time for the silicon band structure is developed. This scattering comes about due to the large effect of strain on the hydrogen-like donor ground-state energy level. The change in energy of the ground state due to the strain caused by phonons is calculated and the resulting phonon scattering relaxation rate is derived.