| 外延CeO2高k栅介质层的结构及介电性能 |
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| 引用本文： | 娄建忠,代鹏超,李曼,赵冬月,刘保亭. 外延CeO2高k栅介质层的结构及介电性能[J]. 电子元件与材料, 2011, 30(3): 32-35 |
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| 作者姓名： | 娄建忠 代鹏超 李曼 赵冬月 刘保亭 |
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| 作者单位： | 娄建忠,LOU Jianzhong(河北大学,电子信息工程学院,河北,保定,071002);代鹏超,DAI Pengchao(河北大学,电子信息工程学院,河北,保定,071002;河北大学,物理科学与技术学院,河北,保定,071002);李曼,赵冬月,刘保亭,LI Man,ZHAO Dongyue,LIU Baoting(河北大学,物理科学与技术学院,河北,保定,071002) |
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| 基金项目： | 国家自然科学基金资助项目，河北省教育厅科学研究计划资助项目，河北省科学技术厅科学技术研究与发展指导计划资助项目，河北大学博士基金资助项目，河北省应用基础研究计划重点基础研究资助项目 |
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| 摘 要： | 利用脉冲激光沉积两步生长法在Si(111)衬底上制备了厚度为10～40nm的外延CeO<,2>薄膜,构建了Pt/CeO<,2>/Si MOS结构.研究了CeO<,2>薄膜的界面及介电性能,实验发现,界面处存在的电荷对MOS结构C-V特性的测量有较大影响,采用两步生长法制备的外延CeO<,2>薄膜在保持较大介电常数的同时...
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| 关 键 词： | 硅衬底外延CeO2薄膜 高k栅介质层 介电性能 |
Structure and dielectric properties of epitaxial CeO_2 thin films for high-k gate dielectric layer |
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| LOU Jianzhong,DAI Pengchao,LI Man,ZHAO Dongyue,LIU Baoting. Structure and dielectric properties of epitaxial CeO_2 thin films for high-k gate dielectric layer[J]. Electronic Components & Materials, 2011, 30(3): 32-35 |
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| Authors: | LOU Jianzhong DAI Pengchao LI Man ZHAO Dongyue LIU Baoting |
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| Affiliation: | LOU Jianzhong1,DAI Pengchao1,2,LI Man2,ZHAO Dongyue2,LIU Baoting2(1.College of Electronic and Information Engineering,Hebei University,Baoding 071002,Hebei Province,China,2.College of Physics Science and Technology,China) |
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| Abstract: | Epitaxial CeO2 thin films,10-40 nm thick,were deposited on Si(111) substrate by the pulsed laser deposition two-step method.The metal-oxide-semiconductor(MOS) structures were further fabricated to evaluate the interface and dielectric properties of CeO2 films.The results show that the C-V characteristics can be greatly affected by the interface charges.The epitaxial CeO2 thin films,which are deposited by two-step process,possess larger permittivities and lower interface state density.The permittivity calcul... |
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| Keywords: | epitaxial growth CeO2 films on Si substrate high-k gate dielectric layer dielectric properties |
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