Thermal and electrical properties of additive-free rapidly hot-pressed SiC ceramics |
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| Affiliation: | 1. Functional Ceramics Laboratory, Department of Materials Science and Engineering, The University of Seoul, Seoul 02504, Republic of Korea;2. Institute of Inorganic Chemistry, Slovak Academy of Sciences, Dubravska cesta 9, 845 36 Bratislava, Slovakia;1. Institute of Inorganic Chemistry, Slovak Academy of Sciences, Dúbravska cesta 9, 845 36 Bratislava, Slovak Republic;2. Functional Ceramics Laboratory, Department of Materials Science and Engineering, University of Seoul, Seoul 02504, Republic of Korea;3. Institute of Electrical Engineering, Slovak Academy of Sciences, Dúbravska cesta 9, 841 04 Bratislava, Slovak Republic;1. Functional Ceramics Laboratory, Department of Materials Science and Engineering, The University of Seoul, Seoul 02504, Republic of Korea;2. Department of Physics, Konkuk University, Seoul 05029, Republic of Korea;1. Functional Ceramics Laboratory, Department of Materials Science and Engineering, The University of Seoul, Seoul, 02504, Republic of Korea;2. Materials Development Section, KEPCO Nuclear Fuel, Daejeon, 34057, Republic of Korea;1. Functional Ceramics Laboratory, Department of Materials Science and Engineering, The University of Seoul, Seoul 130-743, Republic of Korea;2. Department of Physics, Konkuk University, Seoul 143-701, Republic of Korea;1. Functional Ceramics Laboratory, Department of Materials Science and Engineering, The University of Seoul, Seoul 130-743, Republic of Korea;2. Department of Physics, Konkuk University, Seoul 143-701, Republic of Korea |
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| Abstract: | The thermal and electrical properties of newly developed additive free SiC ceramics processed at a temperature as low as 1850 °C (RHP0) and SiC ceramics with 0.79 vol.% Y2O3-Sc2O3 additives (RHP79) were investigated and compared with those of the chemically vapor-deposited SiC (CVD-SiC) reference material. The additive free RHP0 showed a very high thermal conductivity, as high as 164 Wm?1 K?1, and a low electrical resistivity of 1.2 × 10?1 Ω cm at room temperature (RT), which are the highest thermal conductivity and the lowest electrical resistivity yet seen in sintered SiC ceramics processed at ≤1900 °C. The thermal conductivity and electrical resistivity values of RHP79 were 117 Wm?1 K?1 and 9.5 × 10?2 Ω cm, respectively. The thermal and electrical conductivities of CVD-SiC parallel to the direction of growth were ～324 Wm?1 K?1 and ～5 × 10?4Ω?1 cm?1 at RT, respectively. |
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| Keywords: | Silicon carbide Rapid hot-pressing (Field Assisted Sintering Technology) Thermal properties Electrical properties |
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