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Determination of bulk residual stresses in superhard diamond-SiC materials
Affiliation:1. Fraunhofer Institute for Ceramic Technologies and Systems, Dresden, Germany;2. Institut Laue Langevin, Grenoble, France;1. State Key Laboratory of Complex Nonferrous Metal Resources Clean Utilization, Kunming University of Science and Technology, Kunming, 650093, China;2. State International Joint Research Center of Advanced Technology for Superhard Materials, Kunming University of Science and Technology, Kunming, 650093, China;3. Faculty of Metallurgical and Energy Engineering, Kunming University of Science and Technology, Kunming, 650093, China;4. School of Chemistry and Environment, Yunnan Minzu University, Kunming, 650093, China;5. School of Electronic and Telecommunication Engineering, RMIT University, Melbourne, VIC, 3000, Australia;1. CEA, DEN, DMRC, Univ Montpellier, Marcoule, France;2. Univ. Grenoble Alpes, CNRS, SIMAP, F-38000 Grenoble, France;1. College of Biological and Chemical Engineering, Anhui Polytechnic University, Beijing Middle Road, Wuhu, Anhui, 241000, China;2. College of Materials Science and Engineering, Changsha University of Science & Technology, 960, 2nd Section, Wanjiali RD, Changsha, Hunan, 410114, China
Abstract:Superhard silicon carbide bonded diamond materials can be produced by liquid silicon infiltration of diamond containing preforms. These materials can be produced as bulk materials and as layered materials with the SiC bonded diamond only in areas where it is required. In order to understand the behaviour of the materials it is necessary to know the internal stresses in the different phases and at the interface. These stresses were determined by Raman spectroscopy and in the bulk by neutron diffraction using the SALSA instrument in the ILL. In the SiC bonded diamond material the diamond and the remaining Si are under compressive stresses. The SiC-phase is under tensile stresses up to 500 MPa. The Raman investigations and the neutron diffraction resulted in similar results. At the interface between the SiC-bonded diamond and the SiSiC no significant additional stresses could be observed.
Keywords:SiC  Diamond  SiSiC  Ceramics  Stresses  Neutron diffraction
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