Low-temperature sintering of Al2O3 ceramics doped with 4CuO-TiO2-2Nb2O5 composite oxide sintering aid |
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| Affiliation: | 1. CAS Key Lab of Inorganic Functional Materials and Devices, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, China;2. Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100034, China;1. Key Laboratory of Inorganic Functional Materials and Devices, Shanghai Institute of Ceramics, Chinese Academy of Sciences, 1295 Dingxi Road, Shanghai, 200050, People’s Republic of China;2. Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, People’s Republic of China;3. Chinese Academy of Engineering Physics, Mianyang, 621900, People’s Republic of China;4. State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, 1295 Dingxi Road, Shanghai, 200050, People’s Republic of China;1. Moscow State University of Technology “STANKIN”, Vadkovsky Lane 3a, Moscow 127055, Russia;1. Military Institute of Engineering – IME, Department of Materials Science, Praça General Tibúrcio 80, Urca, 22290-270 Rio de Janeiro, RJ, Brazil;2. Brazilian Navy Research Institute – IPqM, Division of Strucural and Electronic Ceramics, Rua Ipiru, 02, Cacuia, 21931-095 Rio de Janeiro, RJ, Brazil;1. School of Materials Science and Engineering, Nanchang Hangkong University, No.696, South Fenhe Avenue, Nanchang 330063, Jiangxi Province, China;2. Polytechnic Institute of Jiangxi Science & Technology Normal University, No.998, Chuangye South Road, Honggutan New District, Nanchang 330100, Jiangxi Province, China |
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| Abstract: | Dense alumina ceramics doped with 5 wt% 4CuO-TiO2-2Nb2O5 composite sintering aids were obtained at low sintering temperatures of 950～975 °C. The ceramic sintered at optimal condition shows good microwave dielectric properties (εr = 12.7, Q × f = 7400 GHz), high thermal conductivity (18.4 W/m K) and high bending strength (320 MPa). TEM and EDS analysis revealed that amorphous Cu-Ti-Nb-O interfacial films with nanometer thickness formed at the grain boundaries, which could provide paths of mass transportation for densification. Al3+ ions may be involved in mass transportation through substitution by Ti3+ and Ti4+ ions near the grain boundary during the sintering process. The accumulation of copper ions at the trigeminal grain boundary was observed. The migration and reaction of copper ions in grain boundaries may also play an important role in promoting mass transportation and low-temperature densification of alumina ceramics. |
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| Keywords: | Alumina Low-temperature sintering Grain boundary LTCC |
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