Enhanced thermal stability of Bi2Te3-based alloys via interface engineering with atomic layer deposition |
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| Affiliation: | 1. Center for Electronic Materials, Korea Institute of Science and Technology, Seoul 02792, Republic of Korea;2. Department of Materials Science and Engineering, Yonsei University, Seoul 03722, Republic of Korea;3. School of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, Republic of Korea;4. Ferrous Alloy Department, Korea Institute of Materials Science, Changwon 51508, Republic of Korea;5. Yonsei-KIST Convergence Research Institute, Seoul 02792, Republic of Korea;6. Division of Nano & Information Technology, KIST School, Korea University of Science and Technology, Seoul 02792, Republic of Korea;1. Center for Electronic Materials, Korea Institute of Science and Technology, Seoul 02792, Republic of Korea;2. Dept. of Applied Physics & KHU-KIST Dept. of Converging Science and Technology, Kyung Hee University Gyung-gi 17104, Republic of Korea;3. Advanced Analysis Center, Korea Institute of Science and Technology, Seoul 136-791, Republic of Korea;4. Division of Nano & Information Technology, KIST School, Korea University of Science and Technology, Seoul 02792, Republic of Korea;1. Center for Electronic Materials, Korea Institute of Science and Technology, Seoul, 02792, Republic of Korea;2. Department of Materials Science and Engineering, Yonsei University, Seoul, 03722, Republic of Korea;3. Advanced Analysis Center, Korea Institute of Science and Technology, Seoul, 02792, Republic of Korea;4. High Temp. Energy Materials Research Center, Korea Institute of Science and Technology, Seoul, 02792, Republic of Korea;5. Division of Nano & Information Technology, KIST School, Korea University of Science and Technology, Seoul, 02792, Republic of Korea;1. The State Key Laboratory of Refractories and Metallurgy, Wuhan University of Science and Technology, Wuhan, 430081, China;2. Key Laboratory for Ferrous Metallurgy and Resources Utilization of Ministry of Education, Wuhan University of Science and Technology, Wuhan, 430081, China;3. National-provincial Joint Engineering Research Center of High Temperature Materials and Lining Technology, Wuhan University of Science and Technology, Wuhan, 430081, China;1. State Key Laboratory of Silicon Materials, Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China;2. Key Laboratory of Advanced Materials and Applications for Batteries of Zhejiang Province, Zhejiang University, Hangzhou 310027, China;3. Cyrus Tang Center for Sensor Materials and Applications, Zhejiang University, Hangzhou 310027, China |
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| Abstract: | The ease of Te sublimation from Bi2Te3-based alloys significantly deteriorates thermoelectric and mechanical properties via the formation of voids. We propose a novel strategy based on atomic layer deposition (ALD) to improve the thermal stability of Bi2Te3-based alloys via the encapsulation of grains with a ZnO layer. Only a few cycles of ZnO ALD over the Bi2Te2.7Se0.3 powders resulted in significant suppression of the generation of pores in Bi2Te2.7Se0.3 extrudates and increased the density even after post-annealing at 500 °C. This is attributed to the suppression of Te sublimation from the extrudates. The ALD coating also enhanced grain refinement in Bi2Te2.7Se0.3 extrudates. Consequently, their mechanical properties were significantly improved by the encapsulation approach. Furthermore, the ALD approach yields a substantial improvement in the figure-of-merit after the post-annealing. Therefore, we believe the proposed approach using ALD will be useful for enhancing the mechanical properties of Bi2Te3-based alloys without sacrificing thermoelectric performance. |
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| Keywords: | Thermal stability Atomic layer deposition Heterogeneous interfaces Te sublimation |
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