A novel temperature-stable Ba2-xCaxMgTi5O13 microwave dielectric ceramic |
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| Affiliation: | 1. Institute of Electro Ceramics & Devices, School of Materials Science and Engineering, Hefei University of Technology, Hefei, 230009, PR China;2. School of Mechanical Engineering, Hefei University of Technology, Hefei, 230009, PR China;1. College of Information Science and Engineering, Guilin University of Technology, Guilin, 541004, China;2. Guangxi Universities Key Laboratory of Non-Ferrous Metal Oxide Electronic Functional Materials and Devices, College of Material Science and Engineering, Guilin University of Technology, Guilin, 541004, China;3. Guangxi Key Laboratory of Hidden Metallic Ore Deposits Exploration, Guilin University of Technology, Guilin, 541004, China;4. School of Materials Science and Engineering, Nanchang University, Nanchang 330031, China;5. Department of Mechanical and Construction Engineering, Faculty of Engineering and Environment, Northumbria University at Newcastle, NE1 8ST, UK;1. State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China;2. Medical Institute Department, Sichuan College of Traditional Chinese Medicine, Mianyang 621000, China |
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| Abstract: | The Ba2-xCaxMgTi5O13 (0 ≤ x ≤ 0.3) microwave dielectric ceramics were for the first time prepared via a conventional solid-state reaction method. A small amount of Ca2+ can dissolve into the lattice by forming solid solutions with a monoclinic structure (C2/m) and further influence the sintering behavior, grain growth and microwave dielectric properties of Ba2-xCaxMgTi5O13 ceramics. Both increase of εr and decrease of Qxf with x should be associated with increased lattice distortion and uneven grain growth although the sample density and the ratio of the ionic polarizability to the molar volume show little variation. Moreover, the A-site bond valence and τf indicate a close relation in current study, such that the Ca2+substitution can induce an increase of τf values. The optimum microwave dielectric properties of εr ～ 29.3, Qxf ～ 30,870 GHz (6.5 GHz), and a near-zero τf ～ +2.1 ppm/°C can be contained in the x = 0.15 ceramic sintered at 1160 °C. |
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| Keywords: | Microwave dielectric ceramics Bond valence Sintering Packing fraction |
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