The dislocation origin and model of excess tunnel current in GaP p-n structures |
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Authors: | V. V. Evstropov M. Dzhumaeva Yu. V. Zhilyaev N. Nazarov A. A. Sitnikova L. M. Fedorov |
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Affiliation: | (1) Ioffe Physicotechnical Institute, Russian Academy of Sciences, Politekhnicheskaya ul. 26, St. Petersburg, 194021, Russia;(2) Physicotechnical Institute, Academy of Sciences of Turkmenistan, Ashkhabad, 744000, Turkmenistan |
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Abstract: | An excess tunnel current in GaP epitaxial nondegenerate p-n junctions on GaP and Si substrates was studied. An important experimental result is that the slope of exponential current-voltage (I–V) characteristic (in lnI–V coordinates) is independent of the width of the space-charge region, i.e., on n-and p-region doping levels. This fact is unexplained by existing models. A dislocation shunt model based on multihop tunneling through a dislocation line, which may be considered as a chain of parabolic potential barriers, is proposed. The density of dislocations predicted by this model is in agreement with the transmission electron microscopy (TEM) observations. |
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