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Fabrication and Performance of 0.25-$mu$m Gate Length Depletion-Mode GaAs-Channel MOSFETs With Self-Aligned InAlP Native Oxide Gate Dielectric
Authors:Jing Zhang Kosel   T.H. Hall   D.C. Fay   P.
Affiliation:Dept. of Electr. Eng., Univ. of Notre Dame, Notre Dame, IN;
Abstract:The fabrication and performance of 0.25- mum gate length GaAs-channel MOSFETs using the wet thermal native oxide of InAlP as the gate dielectric are reported. A fabrication process that self-aligns the gate oxidation to the gate recess and metallization to reduce the source access resistance is demonstrated for the first time. The fabricated devices exhibit a peak extrinsic transconductance of 144 mS/mm, an on-resistance of 3.46 Omega-mm, and a threshold voltage of -1.8 V for typical 0.25 -mum gate devices. A record cutoff frequency of 31 GHz for a GaAs-channel MOSFET and a maximum frequency of oscillation fmax of 47 GHz have also been measured.
Keywords:
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