Investigation of the size effect on optical properties of polycrystalline Ge deposition by pulse laser deposition |
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Authors: | Xiying Ma Weilin Shi |
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Affiliation: | (1) Institute of Optoelectronic Materials, Department of Physics, Shaoxing College of Arts and Sciences, Shaoxing, 312000 Zhejiang Province, People's Republic of China |
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Abstract: | The size effect of optical properties of the polycrystalline Ge/Si films prepared by pulse laser deposition (PLD) is investigated
by photoluminescence (PL) and photocurrent (PC) spectra. The size of Ge nanocrystals is precisely controlled by the pulsed
deposition time and then observed by the atomic force microscopy (AFM). The average size of Ge nanocrystals is about 2, 5
and 25 nm for 1, 2 and 3 min deposited sample, respectively. The size effect on optical properties of Ge nanocrystals has
been analyzed by photoluminescence (PL) and photocurrent (PC) spectra. The PL peaks shift from 0.799 eV for 1 min to 0.762 eV
for 3 mins; at the same time, the photocurrent peaks of the films sharply changes from 0.781 eV to 0.749 eV, the shifts of
PL and PC are contributed to the quantum size effect of Ge nanocrystals. |
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Keywords: | |
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