A study of metamorphic HEMT technological improvements: Impact on parasitic effect electrical models

Metamorphic high electron mobility transistor (MHEMT) technology is well adapted to optical high bit rate telecommunication systems. In this context, we propose in this paper a global analysis of this technology in order to verify if it is suitable for system conditions in terms of on-state and off-state breakdown voltages, f_t and f_max, … Our interest concerns the transistor parasitic effects and their impact on the amplifier circuit performances, considering the transistor role in transmitter and receiver modules. We propose new electrical models for each experimentally measured parasitic effect and they could be added to the MHEMT basic models for circuit design.