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Crystallization-induced superconductivity in amorphous Ti-Ta-Si alloys
Authors:A Inoue  Y Takahashi  C Suryanarayana  A Hoshi  T Masumoto
Affiliation:(1) The Research Institute for Iron, Steel and Other Metals, Tohoku University, 980 Sendai, Japan;(2) Graduate School, Tohoku University, 980 Sendai, Japan;(3) Present address: Department of Metallurgical Engineering, Banaras Hindu University, 221005 Varanasi, India
Abstract:Amorphous alloys containing 0 to 40 at% Ta and 15 to 20 at% Si have been produced in the ternary Ti-Ta-Si system by rapidly quenching the melts using a melt-spinning technique. The amorphous alloys did not show any superconducting transition down to liquid helium temperature (4.2 K). However, a transition was detected above 4.2 K after inducing crystallization in these alloys by annealing at appropriate temperatures. The superconducting transition temperature, T c, increased with increasing tantalum content and showed the highest value of 7.6 K for the Ti45Ta40Si15 alloy annealed for 1 h at 1073 K. An upper critical magnetic field, H c2 of 4.7×106 Am–1 at 4.2 K and a critical current density, J c, of 1.5×104 A cm–2 at zero applied field and 4.2 K were recorded for this alloy. Detailed electron microscopic studies of the crystallization behaviour of the amorphous alloys established that a supersaturated solid solution of tantalum in beta-Ti with a bcc structure forms first, followed by the precipitation of the bc tetragonal Ta3Si compound. Since Ta3Si is not superconducting above 4.2 K, it has been concluded that superconductivity in the crystallized alloys is due to the precipitation of beta-Ti(Ta) solid solution.
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