Fabrication and characterization of field-plated buried-gate SiC MESFETs |
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| Authors: | Andersson K Sudow M Nilsson P-A Sveinbjornsson E Hjelmgren H Nilsson J Stahl J Zirath H Rorsman N |
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| Affiliation: | Microwave Electron. Lab., Chalmers Univ. of Technol., Goteborg, Sweden; |
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| Abstract: | Silicon carbide (SiC) MESFETs were fabricated using a standard SiC MESFET structure with the application of the "buried-channel" and field-plate (FP) techniques in the process. FPs combined with a buried-gate are shown to be favorable concerning output power density and power-added efficiency (PAE), due to higher breakdown voltage and decreased output conductance. A very high power density of 7.8 W/mm was measured on-wafer at 3 GHz for a two-finger 400-/spl mu/m gate periphery SiC MESFET. The PAE for this device was 70% at class AB bias. Two-tone measurements at 3 GHz /spl plusmn/ 100 kHz indicate an optimum FP length for high linearity operation. |
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