| 功率VDMOSFET单粒子效应研究 |
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| 引用本文： | 段雪,郎秀兰,刘英坤,董四华,崔占东,刘忠山,孙艳玲,胡顺欣,冯彬.功率VDMOSFET单粒子效应研究[J].微纳电子技术,2008,45(10). |
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| 作者姓名： | 段雪 郎秀兰 刘英坤 董四华 崔占东 刘忠山 孙艳玲 胡顺欣 冯彬 |
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| 作者单位： | 中国电子科技集团公司,第十三研究所,石家庄,050051 |
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| 摘 要： | 阐述了空间辐射环境下n沟功率VDMOSFET发生单粒子栅穿(SEGR)和单粒子烧毁(SEB)的物理机理。研究了多层缓冲局部屏蔽抗单粒子辐射的功率VDMOSFET新结构及相应硅栅制作新工艺。通过对所研制的漏源击穿电压分别为65V和112V两种n沟功率VDMOS-FET器件样品进行锎源252Cf单粒子模拟辐射实验,研究了新技术VDMOSFET的单粒子辐射敏感性。实验结果表明,两种器件样品在锎源单粒子模拟辐射实验中的漏源安全电压分别达到61V和110V,验证了新结构和新工艺在提高功率VDMOSFET抗单粒子效应方面的有效性。
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| 关 键 词： | 功率纵向双扩散金属氧化物半导体场效应晶体管 单粒子栅穿 单粒子烧毁 缓冲屏蔽 锎源 |
Study of Single Event Effect of Power VDMOSFET |
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| Duan Xue,Lang Xiulan,Liu Yingkun,Dong Sihua,Cui Zhandong,Liu Zhongshan,Sun Yanling,Hu Shunxin,Feng Bin.Study of Single Event Effect of Power VDMOSFET[J].Micronanoelectronic Technology,2008,45(10). |
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| Authors: | Duan Xue Lang Xiulan Liu Yingkun Dong Sihua Cui Zhandong Liu Zhongshan Sun Yanling Hu Shunxin Feng Bin |
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| Affiliation: | Duan Xue,Lang Xiulan,Liu Yingkun,Dong Sihua,Cui Zh,ong,Liu Zhongshan,Sun Yanling,Hu Shunxin,Feng Bin(The 13th Research Institute,CETC,Shijiazhuang 050051,China) |
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| Abstract: | Mechanisms for single event gate-rupture(SEGR)and single event burnout(SEB)in n-channel power VDMOSFETs operating in space radiation environment were analyzed.A novel device structure of local shielding buffer layers and the corresponding polysilicon gate process were explored.In order to determine the single event effect(SEE)sensitivity in power VDMOSFETs manufactured by the new technology,radiation experiments were carried out by exposing device samples of which BVDSS values were 65 V and 112 V to heavy i... |
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| Keywords: | power VDMOSFET(vertical double-diffusion metal-oxide-semiconductor field-effect transistor) SEGR(single event gate-rupture) SEB(single event burnout) local shielding buffer layers 252Cf source |
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