Properties of Gallium Phosphide Thick Films Prepared on Zinc Sul-de Substrates by Radio-Frequency Magnetron Sputtering |
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Authors: | Yangping Li Zhengtang Liu |
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Affiliation: | School of Materials Science and Engineering, Northwestern Polytechnical University, Xi'an 710072, China |
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Abstract: | Radio-frequency (RF) magnetron sputtering was employed to prepare gallium phosphide (GaP) thick films on zinc sulfide (ZnS) substrates by sputtering a single crystalline GaP target in an Ar atmosphere. The infrared (IR) transmission properties, structure, morphology, composition and hardness of the film were studied. Results show that both amorphous and zinc-blende crystalline phases existed in the GaP film in almost stoichiometric amounts. The GaP film exhibited good IR transmission properties, though the relatively rough surface and loose microstructure caused a small loss of IR transmission due to scattering. The GaP film also showed a much higher hardness than the ZnS substrate, thereby providing good protection to ZnS. |
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Keywords: | Radio-frequency magnetron sputtering Gallium phosphide Thick film Infrared transmission |
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