Antimonide Type-II “W” Photodiodes with Long-Wave Infrared R0A Comparable to HgCdTe |
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| Authors: | C.L. Canedy E.H. Aifer I. Vurgaftman J.G. Tischler J.R. Meyer J.H. Warner E.M. Jackson |
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| Affiliation: | (1) Naval Research Laboratory, Washington, DC, 20375, United States;(2) SFA Inc, Crofton, MD, 21114, United States |
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| Abstract: | The recent development of graded-gap W-structured superlattices (GG-Ws) has led to a substantial improvement in the dark current performance of infrared photodiodes implemented with type-II superlattices (T2SLs). A study of ten GG-W photodiode wafers with 50% power responsivity cutoffs from 9 μm to 13.4 μm is presented. Dark current performance has increased by a factor of 10 over that of previous type-II structures, without degrading quantum efficiency. In relation to HgCdTe (MCT) based photodiodes, several samples in the study show effective dynamic-resistance-area products close to the MCT trend line for diffusion-limited R 0 A. |
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| Keywords: | Type-II superlattice (T2SL) strained layer SL GaSb III-V IR detector long-wave infrared (LWIR) photodiode |
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