SiC单晶片加工过程中切割力的分析与建模

SiC单晶具有优良的物理和机械性能，在微电子和光电领域得到了广泛应用，然而由于其高硬度和脆性，晶片的制造非常困难、效率低下。为提高SiC单晶片的加工质量和加工效率，分析了SiC单晶片线锯切割过程中的受力情况；从切屑变形和摩擦两个方面，建立单颗磨粒的法向和切向受力模型，进而得到线锯切割力与工艺参数及线锯物理属性的关系模型；设计了切割力的试验装置，通过不同加工参数下的试验研究，确定了关系模型中的应力系数；通过理论值与试验值的对比校验，法向力和切向力预测值的误差小于9.18%，并对误差产生原因作了分析。结果表明，该切割力理论模型可以对SiC单晶片在同等线锯切割环境下的切割力进行有效预测，为切削力的优化控制提供了理论依据。

Analysis and Modeling Cutting Force for SiC Monocrystal Wafer Processing

Having an excellent physical and mechanical property, silicon carbide (SiC) monocrystal is used extensively in the field of microelectronics and optoelectronics. However, the high hardness and brittleness make the SiC wafer processing difficult and inefficient. In order to improve the surface quality and processing efficiency of SiC wafer, cutting force of wire saw is developed during the wafer processing. From the view of chip deformation and friction, the models of normal force and tangential force are established for single abrasive, and a theoretical model from the cutting force and process parameters and physical attributes of wire saw is obtained. The cutting force experiments are set up, and then the coefficients of the model are determined under different process parameters. Compared with the experimental results, the average errors of normal and tangential forces prediction are less than 9.18% and the reasons for the modeling errors are also analyzed. The results show that the model can predict the cutting force for wire saw cutting process under the same conditions, which provides theoretical basis for the cutting force optimal controlling.