Interaction of highly dissociated low pressure hydrogen plasma with W-C thin film deposits

Thin film deposits of carbon and tungsten on stainless steel substrate were prepared by RF sputtering of a tungsten target in acetylene atmosphere. At the target bias of − 1700 V and the target current of 30 mA cm^− 2, a rather uniform film containing 50 at.% of C and 50 at.% of W was deposited. The thickness of the deposited film was about 1 μm. Samples were exposed to highly dissociated hydrogen plasma created by a microwave discharge at the power of 1000 W. Some samples were heated additionally by concentrated solar radiation. After plasma treatment, the samples were characterized by X-Ray Diffraction and Auger Electron Spectroscopy. The results showed that aggressive hydrogen plasma allows for the removal of carbon from the deposits at moderated temperatures. Prolonged treatment showed formation of highly crystalline pure tungsten, and finally the tungsten film interacted with the substrate forming a thin film rich of Fe₇W₆ compound. The range of temperature and/or treatment time for the removal of carbon from the W-C film was found very narrow.