Commutations dans des couches très minces de Te43Se50Sn7

By thermal deposition in vacuum of very thin films (thickness between 1500 and 8000 Å) of the amorphous semiconductor Te₄₃Se₅₀Sn₇ on a metallic counterelectrode (Au, Cr) we have prepared MSM structures. The top contact was made by means of a tungsten alloy needle. The I–V characteristics and the observed switching effects are discussed on the hypothesis of a purely electronic model. The forming processes depend on the deposition conditions of the semiconductor film; they are described in detail. The thermal dependence of these processes is obvious in all cases.