Commutations dans des couches très minces de Te43Se50Sn7 |
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Authors: | J.C. Bernede Y. Tregouet G. Goureaux |
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Affiliation: | Laboratoire de Physique du Métal, Institut de Physique de l''Université de Nantes, 44037 Nantes Cédex France |
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Abstract: | By thermal deposition in vacuum of very thin films (thickness between 1500 and 8000 Å) of the amorphous semiconductor Te43Se50Sn7 on a metallic counterelectrode (Au, Cr) we have prepared MSM structures. The top contact was made by means of a tungsten alloy needle. The I–V characteristics and the observed switching effects are discussed on the hypothesis of a purely electronic model. The forming processes depend on the deposition conditions of the semiconductor film; they are described in detail. The thermal dependence of these processes is obvious in all cases. |
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