Reactive ion beam sputtering of thin films of lead,zirconium and titanium

Thin films of lead, zirconium and titanium were reactively sputtered in an oxygen atmosphere by a focused ion beam sputtering technique. With this technique, the plasma is contained in the ion gun so that neither the target nor the substrate is in a plasma environment. As a result, several factors which can interfere with the interpretation of the mechanism of compound formation (high energy secondary electron bombardment, high substrate temperature, high deposition pressure) are virtually eliminated.Properties such as deposition rate, resistivity and internal stress as a function of the partial pressure of oxygen were investigated. A decrease in the deposition rate was observed as the partial pressure of oxygen was increased from 1 × 10^-6 to 2 × 10^-4 Torr. This decrease was attributed to a build-up of a surface layer of adsorbed oxygen on the target. A model is proposed to predict the partial pressure of oxygen at which a dielectric film forms, based on the thermodynamic properties of the compound formed. All films deposited are in tensile stress. This suggests that compound formation occurs at the target and that the oxide is sputtered in the collision process.