Reactive sputtering of indium targets in a D.C. triode configuration

A study was initiated on the behaviour of the total pressure during the sputtering process for a d.c. triode sputtering system. The variations in the total pressure are readily attributed to variations in the reactive gas concentration. Experimental evidence is presented to support a model in which the abrupt increase in the deposition rate of films during the reactive sputtering of metals is related to a chemical reaction of the sputtered atoms with the reactive gas.