| 离子注入缺陷局域掺杂的高效率硅pn结发光二极管 |
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| 引用本文： | 杨阳,孙甲明,张俊杰,张新霞,刘海旭,W. Skorupa,M. Helm. 离子注入缺陷局域掺杂的高效率硅pn结发光二极管[J]. 材料科学与工程学报, 2009, 0(1) |
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| 作者姓名： | 杨阳 孙甲明 张俊杰 张新霞 刘海旭 W. Skorupa M. Helm |
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| 作者单位： | 南开大学物理学院弱光非线性光子学教育部重点实验室（南开大学）;Institute;Beam;Physics;Materials;Research;Forschungszentrum;Dresden;Rossendorf; |
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| 基金项目： | “973计划”资助项目(2007CB613403);;国家自然科学基金资助项目(60776036);;教育部新世纪人才项目(NCET-07-0459) |
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| 摘 要： | 本文将硼离子注入n型硅片制备出硅pn结发光二极管,系统研究了硼离子的注入剂量、能量、以及温度等条件对硅pn结电致发光效率的影响。随着注入的B原子浓度的提高,硅pn结二极管的电致发光效率显著增强,在B原子浓度接近2倍于退火温度下的固溶度时,室温下的电致发光效率达到最大值0.12%,比传统的硅pn结发光二极管增强了2-3个数量级。在低温电致发光光谱中,发现了两个来自局部掺杂缺陷的束缚激子发光峰。随着温度的升高,束缚激子的发光峰出现温度猝灭,束缚激子离化为自由电子和空穴,增加了硅带间自由激子复合的发光效率,从而使电致发光呈现随温度增加而增强的反常温度效应。
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| 关 键 词： | 束缚激子 离子注入 硼 退火 调制掺杂 |
Efficient Silicon Light-emitting pn Diode Prepared by Ion Implantation Locally-doped Defects |
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| YANG Yang,SUN Jia-ming,ZHANG Jun-jie,ZHANG Xin-xia,LIU Hai-xu,Skorupa W,Helm M. Efficient Silicon Light-emitting pn Diode Prepared by Ion Implantation Locally-doped Defects[J]. Journal of Materials Science and Engineering, 2009, 0(1) |
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| Authors: | YANG Yang SUN Jia-ming ZHANG Jun-jie ZHANG Xin-xia LIU Hai-xu Skorupa W Helm M |
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| Affiliation: | 1.Physics Institute of Nankai University;Key Laboratory of Weak Light Nonlinear Photonics;Ministry of Education;Tianjin 300071;China;2.Institute of Ion Beam Physics and Materials Research;Forschungszentrum Dresden Rossendorf;P.O.Box 510119;Dresden D-01314;Germany |
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| Abstract: | Silicon pn diodes are prepared by boron ion implantation into Czochralski(CZ) n-type silicon substrate.The influences of the implanted boron dose,energy,and temperature on the electroluminescence(EL) efficiency of the silicon p-n junctions have been systematically studied.With increasing the boron dose,the EL efficiency of the silicon pn diode has been improved remarkably. Efficient EL with power efficiency up to 0.12% is observed for boron concentrations of about twice the solubility limit at the annealing... |
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| Keywords: | bound exction ion implantation boron annealing locally doping |
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