Effects of growth temperature and [PH3]/[In(C2H5)3] on purity of epitaxial InP grown by metalorganic chemical vapour deposition |
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| Authors: | Uwai K. Mikami O. Susa N. |
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| Affiliation: | NTT, Musashino Electrical Communication Laboratory, Musashino, Japan; |
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| Abstract: | High-purity undoped InP epitaxial layers (ND ? NA = 5 × 1014 cm?3, ?77?105 cm2/Vs) are grown by low-pressure metalorganic chemical vapour deposition. The carrier concentrations decrease and the electron mobilities increase as the growth temperature decreases from 700°C to 575°C and the mole fraction ratios ([PH3]/[In(C2H5)3]) increase from 29 to 290. |
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