| 双掺硅P-N-P重结的形成 |
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| 引用本文： | 王因生,熊承堃,林金庭. 双掺硅P-N-P重结的形成[J]. 固体电子学研究与进展, 1986, 0(1) |
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| 作者姓名： | 王因生 熊承堃 林金庭 |
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| 作者单位： | 南京固体器件研究所(王因生，熊承堃)，南京固体器件研究所(林金庭) |
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| 摘 要： | 本文研究双掺杂硅单晶片在非氧化气氛下高温热处理形成P-N-P双重结的现象.利用非氧化热处理杂质再分布理论解释了P-N-P重结的形成,结深的理论计算与实验值符合良好.根据再分布理论给出浅结结深和空间电荷区电场分布表示式.最后就非氧化热处理双掺结和热氧化双掺结作了比较.
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Formation of P-N-P Double-Junction with Dual-Dopant Silicon |
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| Abstract: | This paper studies the phenomenon of P-N-P double-junction built on a dualdopant silicon wafer by the heat treatment under a non-oxidation condition. The theory of impurity redistribution caused by the non-oxidation heat treatment is used in describing the formation of P-N-P double-junction. The calculations of the junction depth agree well with the experimental values.The expressions for the shallow junction depth and the electric field distribution in space charge region have been derived from the theory of redistribution. A comparison is made between the junctions formed by thermal oxidation and non-oxidation treatments. |
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