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Origin of Solid-State Activated Sintering in Bi2O3-Doped ZnO
Authors:Jian Luo  Haifeng Wang  Yet-Ming Chiang
Affiliation:Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139
Abstract:Activated sintering in Bi2O3-doped ZnO has been studied with emphasis on the mechanistic role of intergranular amorphous films. The atomic-level microstructures and bismuth solute distributions in doped powders have been investigated using high-resolution electron microscopy and scanning transmission electron microscopy. Densification is observed to be significant below the bulk eutectic temperature in the presence of Bi2O3 concentrations as low as 0.58 mol%. Transmission electron microscopy of as-calcined and sintered powders shows that significant neck growth and particle coarsening occur in the solid state. Intergranular amorphous films of ∼1 nm thickness, terminating in wetting menisci at sinter-necks, are observed to form concurrently with the onset of activated sintering. In a few instances, amorphous films are also observed at surfaces of the ZnO particles. These films appear to be the free-surface counterpart to equilibrium-thickness intergranular films. Activated sintering in this binary system is attributed to rapid mass transport through subeutectic, equilibrium-thickness intergranular films, with the amorphous phase also providing capillary pressure.
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