| 用MOCVD方法制备ZnO：B透明导电薄膜及其性能优化 |
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| 引用本文： | 孟凡英,江民林,余跃波,胡宇. 用MOCVD方法制备ZnO：B透明导电薄膜及其性能优化[J]. 太阳能学报, 2008, 29(8) |
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| 作者姓名： | 孟凡英 江民林 余跃波 胡宇 |
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| 作者单位： | 上海交通大学物理系太阳能研究所,上海,200240 |
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| 摘 要： | 采用金属氧化物化学气相沉积(MOCVD)方法在石英衬底上生长氧化锌(ZnO)薄膜.改变薄膜材料的生长温度和掺杂气体硼烷(B2H6)的流速,制备一系列薄膜样品.通过x-射线衍射(XRD)、扫描电子显微镜(SEM)、透过率、反射率、电阻率和原子力显微镜(AFM)等测试分析,研究了材料生长温度和B2H6流速对薄膜生长速度、微观结构、薄膜晶向、光学透过率、光学禁带宽度、电阻率、表面粗糙度等特征参量的影响,经过优化实验条件,获得薄膜电阻率在10-3Ω·cm量级,可见光区域光学透过率在85%以上,成功制备低电阻率高光学透过率的ZnO透明导电薄膜.
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| 关 键 词： | 光学透过率 电阻率 透明导电薄膜(TEO) |
CHARACTERISTICS AND GROWTH OF ZnO:B THIN FILMS BY MOCVD PROCESS |
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| Meng Fanying,Jiang Minlin,Yu Yuebo,Hu Yu. CHARACTERISTICS AND GROWTH OF ZnO:B THIN FILMS BY MOCVD PROCESS[J]. Acta Energiae Solaris Sinica, 2008, 29(8) |
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| Authors: | Meng Fanying Jiang Minlin Yu Yuebo Hu Yu |
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| Affiliation: | Meng Fanying Jiang Minlin Yu Yuebo Hu Yu (Institute of Solar Energy,Physical Department,Shanghai Jiaotong University,Shanghai 200240,Chia) |
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| Abstract: | Boron-doped ZnO thin films were deposited on the fused silicon substrates by MOCVD system in this work.The samples were fabricated with various growth temperatures and various flow rates of B_2H_6.Based on the measurement of XRD,SEM,AFM,Hall Effect,and optical transmittance and reflectivity,the characteristics of the thin films,including the crystal plane,optical transmittance,optical band gap energy,resistivity,roughness,were investigated.As a result of optimizing the experimental parameters,the dectrical ... |
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| Keywords: | ZnO B MOCVD |
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