| AFM制备纳米氧化点的研究 |
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| 引用本文： | 王加科,董正超,程显东. AFM制备纳米氧化点的研究[J]. 长春光学精密机械学院学报, 2013, 0(6): 104-107 |
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| 作者姓名： | 王加科 董正超 程显东 |
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| 作者单位： | [1]长春理工大学光电工程学院,长春130022 [2]吉林省高等教育自学考试委员会办公室,长春130000 |
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| 摘 要： | 结合压力传感器氧化绝缘纳米结构的制作，研究了基于AFM的纳米阳极氧化加工过程中偏置电压与环境温度、湿度等对氧化点尺寸的影响。实验结果表明，氧化点的尺寸随偏置电压和环境湿度的增大而增大，但过高的偏置电压和环境温度将会造成氧化点表面产生台阶现象；环境温度22℃，偏置电压8V，环境湿度50％，氧化时间8s，对于n型Si（100）的氧化加工而言是相对合适的加工参数。
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| 关 键 词： | AFM 氧化点 纳米工艺 偏置电压 环境湿度 |
The Research of the Oxide Nano-dots Fabrication by AFM |
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| WANG Jiake,DONG Zhenchao,CHENG Xiandong. The Research of the Oxide Nano-dots Fabrication by AFM[J]. Journal of Changchun Institute of Optics and Fine Mechanics, 2013, 0(6): 104-107 |
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| Authors: | WANG Jiake DONG Zhenchao CHENG Xiandong |
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| Affiliation: | 1.School of Optoeleclronic Engineering, Changchun University of Science and Technology, Changchun 130022; 2.Office of Higher Fducation Self-Taught Examination Council Of Jilin Province, Changchun 130000) |
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| Abstract: | Combining the pressure sensor＇s oxidation insulating nanostructure fabrication this paper studied the impact of bias voltage, ambient temperature and humidity on the size of oxide dots during the AFM-based anodic oxidation na- no-fabrication. Experimental results show that the si.ze of oxide dots increases with the i.ncreasing bias voltage and am- bient humidity, but too high bias voltage and ambient temperature will cause staircase phenomena on the surface of ox- ide dot; ambient temperature 22~C, bias voltage 8V, humidity 50% and oxidation time 8s are relatively suitable pro- cessing parameters for the oxidation fabrication of n-type Si（100）. |
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| Keywords: | AFM anodic oxidation nanoscale bias voltage ambient humidity |
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