EPW腐蚀液中制作近似圆形硅膜研究

研究了《100》单晶硅在EPW腐蚀液中制作近似圆形硅膜,在EPW腐蚀液中因《100》单晶硅腐蚀速率各向异性,在圆形掩膜下很难实现圆形单晶硅膜.基于EPW腐蚀液中《100》单晶硅存在严重凸角削角,采用带锯齿(9个、20个、36个)结构的齿轮掩膜图形腐蚀制作近似圆形硅膜,通过采用SEM观察,随腐蚀时间增加,圆形掩膜EPW腐蚀后硅膜为近似方形,而带有36个锯齿结构的齿轮掩膜腐蚀后硅膜近似圆形.结果表明,利用掩膜锯齿结构在EPW腐蚀液中存在凸角削角现象,能够实现近似圆形硅膜的制作.

Research for Manufactuuring the Proximal Circular Silicon Membrane Using Anistropic Etching with EPW

This paper researches the <100> mono-crystalline silicon to manufacture the proximal circular silicon membrane using anisotropic etching with EPW, because of the <100> mono-crystalline silicon corrosion rate aeolotropies in the EPW solutions, it is very difficult to realize the circular mono-crystalline silicon membrane under the circular mask. Based on the <100> mono-crystalline silicon exists serious convex corners and short corners occurred in the EPW solutions, using the gear masks of dentigerous structure (9, 20, 36) corrosion to manufacture proximal circular silicon membrane, observed by using scanning electronic microscopy (SEM), along with the increasing of the corrosion time, after EPW etching using the circular masks, the silicon membrane is almost the square shape, while after the etching using gear mask which has 36 denticles structures, the silicon membrane is approximate circular. The result shows, that the mask dentigerous structure etching in the EPW corrosive liquid causes convex corners and short corners phenomenon, which can realize the proximal circular silicon membrane manufacture.