Rare-earth elements in the technology of III–V compounds and devices based on these compounds |
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| Authors: | Gorelenok A. T. Kamanin A. V. Shmidt N. M. |
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| Affiliation: | (1) Ioffe Physicotechnical Institute, Russian Academy of Sciences, Politekhnicheskaya ul. 26, St. Petersburg, 194021, Russia |
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| Abstract: | Semiconductors - The results of our studies concerned with the use of rare-earth elements in the liquid-phase epitaxial technology of the InP, InGaAsP, InGaAs, and GaP compounds and with the... |
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