High-voltage planar structure using SiO2-SIPOS-SiO2film

The BVCB0leakage current hFEwere studied for high-voltage planar transistors which had three kinds of passivation films; SiO2-semi-insulating polycrystalline silicon (SIPOS)-SiO2; SIPOS-SiO2; and SiO2-phosphosilicate glass (PSG)-SiO2. The SiO2-SIPOS-SiO2type had a lower leakage current (surface generation current) and higher hFEthan the conventional SIPOS-SiO2type. The SiO2-SIPOS-SiO2type also had the highest BVCB0due to the field-plate effect.