首页 | 本学科首页   官方微博 | 高级检索  
     


Toward High‐Performance Top‐Gate Ultrathin HfS2 Field‐Effect Transistors by Interface Engineering
Authors:Kai Xu  Yun Huang  Bo Chen  Yang Xia  Wen Lei  Zhenxing Wang  Qisheng Wang  Feng Wang  Lei Yin  Jun He
Affiliation:1. CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing, P. R. China;2. Institute of Microelectronics of Chinese Academy of Sciences, Beijing, P. R. China;3. School of Electrical, Electronic and Computer EngineeringThe University of Western Australia, Crawley, WA, Australia
Abstract:
Keywords:field‐effect transistors  HfO2  HfS2  interface engineering
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号